发明名称 PROCESS FOR PRODUCING A SEMICONDUCTOR ARTICLE
摘要 A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.
申请公布号 CA1296816(C) 申请公布日期 1992.03.03
申请号 CA19880560004 申请日期 1988.02.26
申请人 CANON KABUSHIKI KAISHA 发明人 YAMAGATA, KENJI;ICHIKAWA, TAKESHI
分类号 H01L21/02;H01L21/20;H01L21/205;H01L21/329;H01L21/331;H01L21/336;H01L21/337;H01L27/00;H01L27/12;H01L29/06;H01L29/205;H01L29/73;H01L29/74;H01L29/747;H01L29/78;H01L29/786;H01L29/808;H01S5/00 主分类号 H01L21/02
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