| 摘要 |
<p>PURPOSE:To obtain an element with little local heating by using a diamond layer for a p-type semiconductor layer applied with reverse bias voltage between it and an electron avalanche inducing layer. CONSTITUTION:A p-type diamond layer 102 is formed on a p<+>-type Si substrate 101. A SiO2 mask 103 is formed at the preset position, then an n-type diamond layer 104 is formed. A Ti electrode 105, a silver layer 111, a SiO2 insulating layer 106 and a polysilicone extracting electrode 107 are formed into preset shapes. Reverse bias voltage is applied between the electrodes 105, 108, and extracting voltage is applied between the extracting electrode 107 and the electrode 105 to emit electrons to the outside of an element. The local heating of the element is suppressed, and a stable electron emission characteristic is obtained.</p> |
