MANUFACTURING METHOD FOR A SELF-ALIGNED EMITTER-BASE-COMPLEX FOR HETEROBIPOLAR TRANSISTORS

摘要

Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.