| 摘要 |
PURPOSE:To ensure a positive resistance temperature coefficient at the Curie temperature or higher and make very small a room temperature resistance coefficient by adding the predetermined quantity of PbTiO3, Sb2O3 and La2O3 to a BaTiO3 base material. CONSTITUTION:As a semiconductor producing agent, lead compounds, PbTiO3 of 0.1 to 50mol%, Sb2O3 of 0.080 to 0.145mol% and La2O3 of 0.01 to 0.06mol% are added to basic compound, barium titanium oxide and then mixed compound is baked. With the added semiconductor producing agent, a semiconductor may easily be manufactured and moreover resistivity at the room temperature may be set to a smaller value and rising of resistivity at the temperature of Curie point or higher may be set to a large value. Therefore, a low resistance PCT element having excellent flexibility may be manufactured for use in the circuit having a small current capacity. In addition, a barium site may partially be replaced with Pb with addition of a lead compound, PbTiO3. Thereby, element density becomes very large and it may be applied to a circuit having a large current capacity. |
