| 摘要 |
PURPOSE:To obtain an X-ray mask which may be exposed in the sufficient proximity of wafer by providing air holes bored through a supporting frame from the surface opposite to a substrate to be exposed to the rear surface thereof. CONSTITUTION:A mask substrate 11 is formed by SiN, BN, SiC, etc., in the thickness of about 2mum. A mask pattern 12 is formed by Ta, W, Au, etc., or a silicide thereof in the thickness of about 0.5 to 1.0mum. The supporting frame 13 is formed by providing an exposure window 13A of about 25X25mm at the center of an Si substrate in the diameter of about 75 to 100mm and in the thickness of about 0.5 to 0.6mm. In the vicinity of window 13A, a plurality of air holes 13B are provided. A mask pattern 12 is provided in the position corresponding to the exposure window 13A. Extra atmosphere gas at the center (mask pattern mounting region) is also quickly exhausted and rise of pressure is only a little. Therefore, risk of breakdown of mask substrate may be reduced and exposure gap can sufficiently be reduced. |
