| 摘要 |
PURPOSE:To contrive to reduce parasitic resistance of a Schottky barrier element by a method wherein a metal to form a Schottky junction is attached on the surface of a protruding layer provided on the main face of an N type substrate, the second electrode is attached to a part other than the protruding layer. CONSTITUTION:An N type epitaxial layer on the N<+> type Si substrate 12 is mesa- etched to form the protruding layer 11. An Mo layer 10 is attached on the layer 11 to form the Schottky junction 15. An Au layer 14 is attached on the substrate 12 to form the cathode. The substrate 12 is accomodated in a pedestal 13 having favorable thermal conductivity. The grade of thickness of the N type layer 11 is so selected as to enable to generate punch through effect and is made as 0.2-0.5mu. By this constitution, the current path between the anode and the cathode becomes extremely short, and resistance of the substrate is reduced remarkably. Because parasitic resistance is extremely small, accurate diode characteristic can be obtained. |
