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发明名称
METHOD OF FORMING OXYGEN DEPOSIT AT SEMICONDUCTOR WAFER
摘要
申请公布号
JPH0461341(A)
申请公布日期
1992.02.27
申请号
JP19900173696
申请日期
1990.06.29
申请人
KYUSHU ELECTRON METAL CO LTD;OSAKA TITANIUM CO LTD
发明人
MURAKAMI KATSUMI
分类号
H01L21/322
主分类号
H01L21/322
代理机构
代理人
主权项
地址
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