| 摘要 |
PURPOSE:To reduce a physical damage to a semiconductor device which is generated when performing wire-bonding, by making a bonding pad have the structure of wiring layers comprising at least two layers which are contacted electrically with each other. CONSTITUTION:An insulating film 2 is formed on a silicon substrate 1 on which the formation of devices is completed. Thereafter, an aluminum alloy film to come into a first wiring layer 3 is formed on the insulating film 2. In succession, a pattern of the first wiring layer 3 is formed at its predetermined place, and the region of a bonding pad part 4, in which the plural other patterns of the first wiring layer 3 are formed, is formed at its predetermined place. Then, to isolate electrically the first wiring layer 3 from a second wiring layer 9, an insulating film 5 is formed. Thereafter, through holes 8 for connecting the first wiring layer 3 with the second wiring layer 9 are formed. Then, an aluminum alloy film to come into the second wiring layer 9 is formed. In succession, the pattern of the second wiring layer 9 is formed, and is connected with the first wiring layer 3. Finally, after a protective film 10 is formed, a hole 11 for bonding is formed in the bonding pad part 4. |
