| 摘要 |
PURPOSE:To reduce hillock generated on a lower wiring layer at the time of metallizing without damaging other position by forming a thin film on the wiring layer and a base insulating layer on the periphery of the wiring layer, metallizing it. CONSTITUTION:A base insulating layer 11 made of SiO2, and a lower wiring layer 12 made of Al-Si are formed on a board 10. The layer 12 and the layer 11 formed on the periphery of the layer 12 are covered with an Al-Si thin film 15 having about 300Angstrom thick by a sputtering method, and the layer 12 is metallized in a state that the layer 12 and the layer 11 are covered with the film 15. In this case, a large hillock 13 is generated on the film 15, but an extremely small protrusion is merely generated on the layer 12. After the film 15 is removed, an interlayer insulating layer 14 is formed on the layer 12 and the layer 11 formed around there. Thereafter, next wiring layer and the interlayer insulating layer are alternately formed to obtain a multilayer wiring board. |
