摘要 |
PURPOSE:To form a partly A1 coated heat radiating substrate which prevents wire discontinuity accident caused by the thermal fatigue of a soldered junction by bonding A1 bonding wire on the A1 film of the partly A1 coated heat radiating substrate by ultrasonic bonding. CONSTITUTION:A holed tray 1, which has holes 2 whose diameter is 3mm and that permits simultaneous PVD processing for 25 pieces of heat radiating substrates which are 10mm in width, 13mm in length and 1mm in thickness, is provided. On the holed tray 1, the sized heat radiating substrates which are Ni plated on Mo are set and the substrates are coated with a 5mum thick Al film 3 by ion plating having the holed planes facing to the bottom. A semiconductor chip 5 is soldered on the uncoated part of the partly A1 coated heat radiating substrate 4 which are circularly coated with the A1 film 3 and on the A1 film 3, A1 bonding wire 7 is bonded by ultrasonic bonding. |