发明名称 KORREKTIONSVERFAHREN FUER SCHALTUNGSPATRONE.
摘要 A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on an conductive film (101) is coated with a protective film (204), then forming a hole or a slit by irradiating a high-intensity focused ion beam (502) to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film (101) as a plating electrode, thereby forming a metal frame (108) to correct the dropout defective portion.
申请公布号 DE3867651(D1) 申请公布日期 1992.02.27
申请号 DE19883867651 申请日期 1988.02.12
申请人 HITACHI, LTD., TOKIO/TOKYO, JP 发明人 HIROSHI, YAMAGUCHI, FUJISAWA-SHI KANAGAWA-KEN, JP;KEIYA, SAITO;AKIRA, SHIMASE;SATOSHI, HARAICHI;SUSUMU, AIUCHI;NOBUYUKI, AKIYAMA, YOKOHAMA-SHI KANAGAWA-KEN, JP;SHINJI, KUNIYOSHI, SUGINAMI-KU TOKYO, JP;TSUYOSHI, KIMURA, HIGASHIMURAYAMA-SHI TOKYO, JP
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/00
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