| 摘要 |
PURPOSE:To control a leakage malfunction due to a defect to be expected at the time of operation of an element by isolating the end of a storage node region to be formed along the wall surface of a trench from an element separating region to be formed near the opening of the trench. CONSTITUTION:In a charge storage unit, a capacity insulating film 6 is formed on the wall surface of a trench, a polysilicon electrode (cell plate) 4 is formed thereon, further a buried polysilicon 9 is provided thereon through an insulating film 10, and a capacity N<+> type layer 8 is formed as a storage node along the trench in a substrate. A P<+> type layer 11 is formed outside the layer 8, and an element separating region 5 is formed near the opening of the trench. Here, the layer 8 is formed at its end at a position separated from the end of the region 5 at a position extended at the wall of the trench to the lower side of the region 5. |
