| 摘要 |
PURPOSE:To connect the base electrode of a semiconductor chip without using a bonding pad by coating the part of a heat radiating substrate plane on which the semiconductor chip is mounted with an Al film by PVD and directly bonding Al bonding wire on the Al film on the heat radiating substrate by ultrasonic bonding so as to permit Al-Al connection. CONSTITUTION:A heat radiating substrate 1 is bonded on a ceramic substrate 5 by using the Cu heat radiating substrate 1 which is coated with 5mum thick Al film 2 on the part of one side by deposition and on the heat radiating substrate 1, a semiconductor chip 3 is bonded by soldering. On the Al film 2 of the heat radiating substrate 1, Al bonding wire 4 is bonded by ultrasonic bonding. Thus, a bonding pad 6 is eliminated. The Al film of the heat radiating substrate and the Al bonding wire are bonded by Al-Al junction, which hardly peels off by heat cycle and permits long term use. |
