| 摘要 |
PCT No. PCT/FR89/00142 Sec. 371 Date Nov. 16, 1989 Sec. 102(e) Date Nov. 16, 1989 PCT Filed Mar. 24, 1989 PCT Pub. No. WO89/09479 PCT Pub. Date Oct. 5, 1989.Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45 DEG to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.
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