| 摘要 |
PURPOSE:To accurate transfer dense patterns as well by forming the patterns by holography. CONSTITUTION:A photoresist 7 is applied over the entire surface via an insulating film 6 on a wafer 5 and a hologram 3 is used as a reticule. The photoresist 7 is exposed by using UV light as a laser beam. The light diffracted on the hologram 3 passes a reducing lens 8 and the patterns reduced to 1/5 are superposed on the wafer 5 and are baked. The patterned wafer 5 is immersed in a developer to be developed and the region irradiated with the light is washed away. The unnecessary insulating film 6 is etched away by anisotropic etching using O2. The photoresist 7 is removed by a solvent and the wafer formed with the patterns of the reticule (hologram 3) on the insulating film 6 is produced. The wafer formed with the patterns in such a manner is not formed with the patterns different from the actual patterns even if fine flaws, pinholes, etc., are formed on the reticule, by which the semiconductor device having high reliability is efficiently produced. |
