| 摘要 |
PURPOSE:To improve quality by providing negative resist films in the parts where the light shielding films of a transparent substrate are not formed. CONSTITUTION:The production of the mask for forming fine patterns is executed by applying and forming the negative resist films 3 of 5,000Angstrom film thickness on the surface of the light shielding films 2 formed on the surface of the transparent substrate 1. The films 3 are then irradiated and exposed with light of 300 to 400nm wavelength and 20 to 30mW/cm<2> illuminance from the side of the transparent substrate 1 where the light shielding films 2 and the films 3 are not formed. The light absorptive films 3 are formed in the parts of the wide aperture patterns 2a of the light shielding films 2 when the films 3 are subjected to dip developing. The films 3 are, however, not opened in the parts of the narrow aperture patterns 2b and, therefore, the negative resist films 3 are removed by the development processing and nothing is left therein. The mask is then used for a 5:1 reduction stepper and the positive resist film 6 formed on the surface of a material to be exposed, for example, a semiconductor wafer 5, is exposed by the g ray single wavelength light at 40 to 50mj/cm intensity and is developed by an aq. soln. of 2.38% TMAH, by which the positive resist film 6 is patterned. |
