发明名称 CHARGED PARTICLE BEAM EXPOSURE METHOD AND STENCIL MASK USED THEREIN
摘要 PURPOSE:To expose a pattern, which has a measure of regularity, at high speed by distributing opening regularly within, at least, one block pattern area of a stencil mask 1. CONSTITUTION:A plurality of block patterns areas are made in a stencil mask 1, and in one of them are arranged regularly a plurality of openings 5-1. Next, these openings are provided with a pair of blanking electrodes 8-1 and 9-1 respectively. And according to the pattern to be exposed, desired voltage is applied to each electrode, and a charged particle beam 3 is applied on the region 4-1. As a result, the beam 3, which is selectively let penetrate, is applied on a water, and the exposure pattern 7 according to application voltage pattern is formed.
申请公布号 JPH0458518(A) 申请公布日期 1992.02.25
申请号 JP19900171001 申请日期 1990.06.27
申请人 FUJITSU LTD 发明人 SAKAMOTO JUICHI;TAKAHASHI YASUSHI;DAIKYO YOSHIHISA;YASUDA HIROSHI
分类号 H01L21/027;G03F1/20;G03F7/20;H01J37/04;H01J37/317;H01L21/30 主分类号 H01L21/027
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