| 摘要 |
In a process for the fabrication of a bipolar semiconductor device having a substrate, the substrate defining a working surface, and a collector region of a first conductivity type formed within the substrate at a position adjacent to the working surface, a patterned, oxidation-resistant film is formed on a predetermined portion of the collector region. A silicon oxide film region is formed within the collector region at a position spaced downwardly from an exposed surface of the collector region. A selective epitaxial layer of a second conductivity type is formed so that the selected epitaxial layer extends from the exposed surface of the collector region to a portion of a top part of the patterned, oxidation-resistant film. A portion of the patterned, oxidation-resistant film, the portion being free of the selective epitaxial layer, is removed to expose the collector region. A base region of the second conductivity type is formed so that the base region extends from the thus-exposed surface of the collector region to the silicon oxide film region. An emitter region of the first conductivity type is then formed within the base region at a position adjacent to the exposed surface of the collector region.
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