| 摘要 |
PURPOSE:To improve the operating speed of a semiconductor device by forming a structure in which a plurality of collectors of a load transistor in an IIL are disposed substantially equidistantly from a base electrode, thereby preventing the occurrence of a difference in the current amplification factors of the respective collectors. CONSTITUTION:An N<-> type epitaxial layer 22 is formed on an N<+> type substrate 21, and an N<+> type region 25 (or an oxidized layer) is formed at the periphery to form an active region 31. A P type base region 32 is formed in the region 31, and three N<+> type collector regions 33 are, for example, formed in the region 32. A P<+> type region 32a is formed in the region except the region 33 in the region 32. An injector region 36 is formed at the time of forming the region 32a. Collector electrodes 35 are formed on the respective regions 33, and a base electrode 34 is formed on the region 32a which contacts in the width equal to the distance from the respective regions 33. Since the difference of the base spreading resistances for the respective collectors can be obviated in this manner, the current amplification factors of the respective collectors can be equalized and the operation can also be accelerated. |
