| 摘要 |
PURPOSE:To form a memory cell having a large capacity by forming a polysilicon including impurity and a dielectric material film before and after formation of a memory node. CONSTITUTION:After deposition of an interlayer insulating film 4, a polysilicon 13 including a first impurity is formed and thereafter a first dielectric material film 14 consisting of SiO2 film or Si3N4 film or a composite film of them is formed on the surface thereof. Moreover, a resist pattern 5 is formed thereon. Next, a contact window 6 is opened to reach the n<+> type active region of a switching transistor formed on a p-type silicon substrate l. Next, an insulating film 15 consisting of SiO2 is formed, a polysilicon 16 including a second impurity is deposited and a resist pattern 8 is formed thereon. Next, a memory node 9 is formed. Thereafter, a second dielectric material film 17 consisting of SiO2 film or Si3N4 film or a composite film of these films is formed at the surface of the memory node 9 and a resist pattern 18 is formed thereon. |
