| 摘要 |
PURPOSE:To assure the readout and rewrite-in voltage to a memory cell, by boosting the word line drive pulse more than the power supply voltage before the operation of sense amplifier circuit and boosting it once more after the operation of the sense amplifier circuit. CONSTITUTION:First, boosting capacitors C3, C4 are charged with boosting pulses phi1, phi2 outputted from delay circuits D1, D2 after a given time through the input of word line drive pulse WP, to boost the word lines W1, W2. Futher, a sense amplifier, drive signal S is inputted to delay circuits D3, D4 and word line boosting pulses phi3, phi4 is outputted after a given time. The boosting capacitors C3, C6 are charged with the word line boosting pulses phi3, phi4 and the word lines W1, W2 are boosted again. Thus, the potential of the word lines W1, W2 can be assured sufficiently highly. |
