| 摘要 |
PURPOSE:To easily form the photomask for phase shift by forming grooves having a specific depth with respect to an exposing wavelength by etching on one of one photomask deriv. substrate of adjacent apertures. CONSTITUTION:Line and space patterns consisting of chromium 2 having 100nm thickness are formed on a quartz glass substrate 1 having 1.5mm thickness. The grooves 4 are formed on the quartz glass substrate 1 having 1.5mm thickness. The grooves 4 are formed on the quartz glass substrate 1 surface of the apertures at every another adjacent apertures. The depth of the grooves 4 are set, for example, to 440nm accordance with the exposing light of 436nm. The grooves are formed by having the depth D determined by D=(2N-1)lambda/2(n-1) with the exposing wavelength as lambda, (n) as the refractive index of the transparent dielectric substrate and N as a natural number. Since the phase of the transmitted light can be adjusted by the depth of the grooves in such a manner, there is no need for special materials as the mask material and the production is easy. The stage for etching the dielectric substrate by the same resist mask as for etching of chromium is simple. |
