| 摘要 |
PURPOSE:To enable grid defect and quality change in each layer to be reduced remarkably and achieve a highly efficient and bright blue-color emission to be achieved by constituting each layer with a crystal of the same substance (compound between II-VI families). CONSTITUTION:A first layer 1 consisting of a semiconductor between n-type II-VI, a second layer 2 consisting of a compound semiconductor between n-type II-VI families which mainly consists of a compound between II-VI families which are of the same substance as a compound between II-VI families of the layer 1, and a third layer 3 consisting of a compound semiconductor between p-type II-VI families which mainly consist of the same compound between II-VI families as the compound between II-VI families used for the layer 1 are formed, thus enabling generation of grid defect due to grid mismatching to be suppressed greatly and quality change due to diffusion of constituting elements from the layer 1 to the layer 2 to be suppressed greatly as compared with hetero structure of different substances. Also, absorption of light emitted at the layer 1 which is the substrate layer can be suppressed for improved efficiency and use of a crystal where a III family element is added to the layer 2 allows the layer 2 to be utilized as a light-emitting layer, allows electrical control range to be expanded, and achieving a high brightness and blue-color emission. |
