| 摘要 |
<p>PURPOSE:To obtain larger capacity by constituting the thin film field effect type transistor element array of the 2nd accumulative capacity electrodes connected to picture element electrodes through insulating films and the 1st accumulative capacity electrodes connected to gate bus lines through insulating films and held between the 2nd accumulative capacity electrodes and the picture element electrodes. CONSTITUTION:The transistor element array is constituted of the 2nd accumulative capacity electrodes 10 connected to the picture element electrodes 7 through contact holes 8b formed on insulating films 12 and the 1st accumulative capacity electrodes 9 connected to gate bus lines 2 through contact holes 8a formed on the insulating films 12, 13 and held between the 2nd electrodes 10 and the electrodes 7. Since the picture element electrodes, the accumulative capacitor electrodes and gate bus lines are constituted as laminated structure through the insulating films on the accumulative capacitor formation part, capacitor corresponding to two or three times of conventional one can be obtained from the same area.</p> |
