| 摘要 |
<p>PURPOSE:To form a mark for electron beam adjustment with a simple method and to contrive an improvement in a throughput and a yield by forming the mark for electron beam adjustment while an etching or the growth of a metal is conducted by irradiating the mark with FIB (convergent ion beam). CONSTITUTION:FIB enables to etch selectively only a portion irradiated with ion beams or to form a film of metal, etc., only on the irradiated portion. Then on the preceding stage forming an IC patter 7 on the mask 4 with electron beams, the mark 5 is formed with FBI. Thus by using only FBI, the mark can be formed easily and each of the conventional steps to form the mark such as (resist coating film, baking, drawing a mark shape with electron beams, development, etching of an absorption body, stripping a resist film) can be omitted and the mask can be formed in a short time. Also the yield is improved because the sticking of dust and fear which any damage might occur can be reduced.</p> |
