发明名称 POLISHING METHOD
摘要 <p>PURPOSE:To enlarge a polishing plate and to improve the accuracy of a profile roughness by using in the order of polycrystal diamond, monocrystal diamond, boron nitride and silicon/carbide as the materials of abrasive grains. CONSTITUTION:In case of polishing a substrate 2, abrasive grains 4 composed of polycrystal diamonds 4A are sprayed initially, then, the abrasive grains 4 composed of monocrystal diamonds 4B are sprayed, moreover, the abrasive grains 4 composed of boron nitride 4C are sprayed and finally the abrasive grains 4 composed of silicon/carbide 4D are sprayed. The polishing quantity is thus made larger by the abrasive grains of high hardness initially, the hardness is gradually reduced, the polishing rate is increased by performing the polishing for the specific time respectively in the order of the polycrystal diamond 4A, monocrystal diamond 4B, boron nitride 4C and silicon/carbide 4D so as to realize the improvement of the polishing accuracy and the profile roughness can be improved.</p>
申请公布号 JPH0453669(A) 申请公布日期 1992.02.21
申请号 JP19900162019 申请日期 1990.06.20
申请人 FUJITSU LTD 发明人 MATSUMOTO KENICHI
分类号 B24B37/00;H05K1/03;H05K3/00;H05K3/38 主分类号 B24B37/00
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