| 摘要 |
PURPOSE:To form a fine resist pattern capable of application to a dry etching by applying a resist added Tetra-n-butyl ammonium perchlorate (TnBAP) on a substrate, then extracting TnBAP in an upper layer of resist and heating it. CONSTITUTION:The resist which TnBAP added to polymethyl methacrylate is used, and TnBAP in the applied resist surface is extracted with a lower alcohol and heated, then the solubility of a part extracted TnBAP into a developer is decreased. When developed after exposure on the desired pattern, a sharper resist pattern on a flank than the substrate is formed, because the wear of the film on the upper layer part of the unexposed portion does not occur so much. Hence the film resist pattern capable of application to dry etching is formed. |
