| 摘要 |
PURPOSE: To improve electrical mobility and to reduce corrosion susceptibility by allowing a first layer to contain a barrier metal and a second layer above it to contain aluminum copper and silicon. CONSTITUTION: A layer 14 made of a barrier metal or an alloy is adhered onto a dielectric film 14 and contacts an electrode 10 and a dope treatment region 6 being exposed after contact corrosion. The barrier layer 14 is, for example, a titanium - tungsten alloy. A metallization layer 16 is an aluminum alloy. A metallization layer 16 contains a dope treatment level of copper with a range up to, for example, 0.5-6%. The presence of copper in the aluminum alloy improves the electrical mobility of the aluminum film, that does not contain copper. Also, the metallization layer 16 contains a dope treatment level of silicon with a range up to 0.1-3.0%. Therefore, the metallization layer 16 is sputtered from a single target and the target contains both and silicon. The presence of silicon in the film improves points susceptible to corrosion. |
