| 摘要 |
<p>Integrated circuit memories, and specifically electrically programmable memories, are described. In order to take into account the fact that memory cells can comprise access contact flaws which may become fatal with age, a testing method is provided wherein the cells (TGF1) are read by comparing a reference cell (TGF) current Iref with the sum of the current I of the tested cell and a bias current I'bias which is weaker than current Ibias which is used in modes other than the testing mode (i.e. in normal memory reading mode).</p> |
