PHOTORESIST FILM FORMATION METHOD

摘要

PURPOSE:To increase a uniformity of a pattern markedly in the thickness direction by exposing a photoresist film which has a resist stationary using a photomask and then developing it. CONSTITUTION:Using a photomask 8 which is composed of a light penetrable substrate 8a and a shading film 8b that is so formed on one face of the substrate 8a as to correspond to the central part of a photoresist film 2, the photoresist film 2 is exposed by ultraviolet rays to form an exposed area 10' on the most outer part of a substrate 1. Then, the photoresist film 10 is developed to remove the exposed area 10'. A photoresist film 3 for pattern formation is exposed by ultraviolet rays 5 using a photomask 4 to form a photoresist film 6 having an area 6' which has been exposed to a desired pattern. Lastly, the exposed area 6' is removed by development of the photoresist film 6 to form a photoresist film 7 of a desired pattern.