| 摘要 |
A semiconductor integrated circuit device for suppressing power noises induced on a power line during high-speed operation of the device is described. On the rear side of a semiconductor substrate 10 having an integrated circuit formed thereon, a dielectric film 12 having a high permittivity is coated, to thus form a large capacitance Cb between a package lead frame 14 and the substrate 10. Thereafter, power having a polarity opposite to that of a power supply applied to the substrate 10 is connected to the lead frame 14 so as to form a decoupling capacitor between power terminals of a chip. Thus, power noises are decreased and a design area of the integrated circuit can be reduced. Another electric component, for example, a resistor or diode, may be formed instead of the capacitor. <IMAGE> |
