| 摘要 |
PURPOSE:To form patterns which are free from residual films after development by forming polyimide patterns via a film of an org. silicon compd. on copper wirings, then removing the above-mentioned film. CONSTITUTION:The copper layer is formed by sputtering on a silicon wafer to obtain the desired copper wiring patterns. A coating liquid for forming the silicon dioxide film is applied thereon and is subjected to a heat treatment, by which the film is converted to the silicon dioxide film. The soln. of a photosensitive polyimide precursor is then applied on the silicon wafer formed with the silicon dioxide film and is dried; thereafter, the film is developed and rinsed to form the patterns of the polyimide precursor. The patterns are thereafter cured and heated to obtain the polyimide patterns. The patterns are then treated with an aq. hydrofluoric acid soln. to remove the silicon dioxide film of through- hole parts. |
