发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To increase a write margin in a long cycle by generating a one-shot pulse and boosting against when detecting reduction in the level of a word line driving signal in the case of operating. CONSTITUTION:On standby, the word line driving signal (the inverse of RAS) is H and the word line driving signal (RX) is L. When reading or writing a data, however, the inverse of RAS is L and the signal RX is boosted up to a Vcc+alpha through a boosting capacitor 3 according to the delay signal of the RX itself. In such a case, when there is fine leaf in the boosting capacitor 3 and the level of the RX is reduced only by beta, a level detector 4 for the RX outputs H. A node B is turned from H to L while being slightly delayed rather than the change of a node A from L to H by the operations of inverters 5-7. In this case, there is a moment when the both nodes A and B are made H, and by inputting the two H of these nodes A and B and the H of a node C to a gate 9, the one-shot pulse to be momentarily made H is generated at the output of the gate 9. This one-shot pulse boosts the level of the RX again through a boosting capacitor 10.
申请公布号 JPH0453087(A) 申请公布日期 1992.02.20
申请号 JP19900160615 申请日期 1990.06.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAGURA TSUKASA
分类号 G11C11/407;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/407
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