| 摘要 |
PURPOSE:To improve the contrast of an image on a wafer by providing a pattern made of a material which is transparent to exposure wavelength at a part of a 2nd opening part surrounding an original opening part. CONSTITUTION:The 2nd opening part 2 with an auxiliary pattern is formed surrounding the 1st rectangular opening part 1 with a contact hole pattern to be transferred and shifters 3 which are made of a transparent material to exposure light and shift the phase of the exposure light are provided only on the vertical and horizontal parts about the opening part. The film thickness of the shifters 3, wavelength lambda, and the refractive index (n) of the shifters corresponding to the wavelength lambda are set preferably as shown by an equation. Then a mask pattern like this is used to expose the wafer. |
