| 摘要 |
PURPOSE:To realize a coupling part, which can obtain a highefficiency optical coupling operation, with good controllability by using a vapor epitaxial growth operation by a method wherein thin-film layers by an InGaAsP layer and an InP layer are introduced between an InP substrate and an active layer. CONSTITUTION:An n-InGaAsP thin-film layer 2, an n-InP thin-film layer 3, an InGaAsP active layer 4 and a p-InP clad layer 5 are grown sequentially and continuously on an n-InP substrate 1; SiO2 or the like is patternd in one part on the p-InP clad layer 5; only the p-InP clad layer 5 is etched selectively by making use of it as a mask. Only the InGaAsP layer 4 is etched selectively by making use of the p-InP clad layer 5 as a mask; in succession, the p-InP clad layer 5 and the n-InP thin-film layer 3 are etched selectively by making use of the active layer 4 as a mask. Then, one part of the SiO2, mask is etched; a multilayer film composed of InP 7 and InGaAsP 8 and the like is grown in parts other than it by making use of the SiO2, as a mask by a vapor epitaxial growth method. Thereby, the etching side face becomes vertical and the growth operation by an MO-VPE method can be executed. |
