| 摘要 |
<p>The trench pattern (11) of a dielectrically isolated island architecture (14) is filled with doped polysilicon and used as an interconnect structure for circuit devices that are supported within the islands, thereby decreasing the amount of topside interconnect (61) and reducing the potential for parasitics beneath tracks of surface metal. Manufacture of the conductor-filled trench structure may be facilitated by depositing polysilicon over a dielectrically coated trench grid structure and then planarizing the polysilicon to the surface of the oxide dielectric. The exposed polysilicon is doped and then oxidized to seal the dopant, which forms a thin oxide layer on the poly. The oxide dielectric for the trench can then be selectively patterned to form a mask to be for the initial doping of the islands.</p> |
