| 摘要 |
PURPOSE:To increase the area of a capacity part and reduce a cell by etching one part of node polysilicon at the same time with polysilicon when forming a stack type memory cell. CONSTITUTION:With a second resist pattern 16 as a mask, a conductive film 11 for plate electrode, an insulating film 10 for a capacitor insulation, and a conductive film 4 for a node electrode are etched at the same time. That is, the three films of the polysilicon layer 11 for a plate electrode, the capacitor insulating film 10 and the node electrode on the central interlayer insulating film 6b are removed at the same time separately for each cell, and a bit line contact 13 leading to the upside of the central interlayer insulating film 6b are formed and also a plate electrode film 14 is formed. After the removal of the second resist pattern 16, a thermal oxide film 15 is formed by thermal oxidation on the whole face of the plate electrode film 14 including the exposed faces of the three films 14, 10, and 4 exposed in the bit line contact 13. |
