| 摘要 |
<p>In the semiconductor integrated circuit device of the present invention which uses MOSFETs as its components, the gate electrode of the MOSFET is constructed by using a silicide gate, a polycide gate or a metal gate. The source-drain region of the MOSFET for the internal circuit which does not require connection to an external circuit has the salicide structure, and the source-drain region of the MOSFET for the buffet circuit which requires a direct connection to an external device has a region which is not of salicide structure at least in a portion adjacent to the gate electrode. The gate electrode and the source-drain region of the internal circuit become to have low resistances so that it is possible to realize an increase in the operating speed by using them as a part of the wirings. Further, in the source-drain region of the buffer circuit there is provided a region of high resistance in the vicinity of the gate electrode so that it is possible to enhance the ESD resistance. <IMAGE></p> |
