| 摘要 |
PURPOSE:To obtain a high frequency semiconductor device with high usable frequency by increasing a cutoff frequency by incorporating an amplifier part, a matching circuit part, and a division fin which divides a device container into plural areas in the device container. CONSTITUTION:A microwave power inputted from an input side lead electrode is supplied to microwave FETs 3a, 3b passing an input side matching circuit. The microwave power amplified at the microwave FETs 3a, 3b passes an output side matching circuit, and is outputted from an output side lead electrode. An internal matching type amplifier is divided into two areas by the division fin 9. Therefore, the size of one area in the device container is reduced to 1/2, which increases the cutoff frequency inversely proportional to the size of the device container. Therefore, it is possible to increase a frequency band area where the internal matching type amplifier can be used. |
