| 摘要 |
PURPOSE:To arrange that a laser machining point is irradiated surely by a method wherein a laser beam is scanned on the pattern face of a semiconductor wafer, a reflected beam is detected, the position of the laser machining point is detected, an X-Y-Z stage is moved, by means of a position detection output, in the X-Y direction perpendicular to the Z direction as the optical-axis direction of an objective lens in such a way that the laser machining point is situated on the optical axis of the objective lens. CONSTITUTION:The position of a laser machining point 2a on a semiconductor wafer 1 is detected by an output of a photodetector 22 and by an X-Y deflection signal. Then, at a detection and control part 23, a driving mechanism 24 by means of a detection output of the position of the laser machining point 2; and an X-Y-Z stage 11 is moved in the X-Y direction in such a way that the laser machining point 2a is situated on the optical axis of an objective lens 19. Then, in the moved position, the laser machining point 2a is irradiated, via a beam splitter 18 and the objective lens 19, with a laser beam 26 which is absorbed at the laser machining point 2a from a laser 25 for machining use. A desired machining operation is executed to the laser machining point 2a. |
