发明名称 METHOD FOR CORRECTING PHASE SHIFT PART OF PHASE SHIFT MASK
摘要 PURPOSE:To easily correct the white defect of a phase shift part by applying SOG, irradiating only the white defective part with energy and turning the part into SiO2. CONSTITUTION:A light shielding part 10, a light transmitting part 12 and the phase shift part 11 are provided on a substrate 1. Then, the SOG is applied and the white defect part 2 is corrected by irradiating only the white defective part 2 with the energy and turning the part into SiO2. Besides, the SOG can be applied by dissolving it in solvent and the SOC which contains silicon and which can be applied by dissolving it in the solvent such as organic solvent is desirebly used. Thus, the white defect 2 of the phase shift part 11 of a phase shift mask is easily corrected.
申请公布号 JPH0450844(A) 申请公布日期 1992.02.19
申请号 JP19900156785 申请日期 1990.06.15
申请人 SONY CORP 发明人 TSUMORI TOSHIRO
分类号 G03F1/29;G03F1/68;G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/29
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