METHOD FOR FORMING A GERMANIUM LAYER AND A HETEROJUNCTION BIPOLAR TRANSISTOR,申请号US19890457673-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD FOR FORMING A GERMANIUM LAYER AND A HETEROJUNCTION BIPOLAR TRANSISTOR
摘要
申请公布号	US5089428(A)	申请公布日期	1992.02.18
申请号	US19890457673	申请日期	1989.12.27
申请人	TEXAS INSTRUMENTS INCORPORATED	发明人	VERRET, DOUGLAS P.;BEAN, KENNETH E.
分类号	H01L21/20;H01L21/316;H01L21/331;H01L29/737	主分类号	H01L21/20
代理机构		代理人
主权项
地址

您可能感兴趣的专利

MICROWAVE INTERFEROMETER

PLATE HEAT EXCHANGERS

Improvements in or relating to ladle lining formers

Apparatus for Securing Workpieces for Electro-chemical Processes

YARN TENSION REGULATOR IN A DOUBLE TWISTER

WATER-SOLUBLE ZINC PHOSPHATE GLASSES AND ANTICORROSIVE PAINTS INCORPORATING THEM

APPARATUS FOR FORMING A LONG LEADING END IN A WIRE WHEN WINDING SAID WIRE ON A REEL

Method of Cleaning a Reactor

MANUFACTURING A GYPSUM HARDENED BODY

An improved nail polish bottle and closure therefor

PACKAGING APPARATUS

ARRANGEMENT FOR REDUCTION OF DOWN TIMES DURING A MACHINE STOPPAGE

DOCTOR FOR SPREADING A STREAM OF PARTICLES

Suspension of a travel gear of vehicles for rugged terrain

APPARATUS FOR BLOW MOULDING

BLOW MOULDING METHOD

Improvements in or relating to pipette means

DUAL PURPOSE COAT

FLOW CONDITION INDICATOR

PRICE DISPLAY SYSTEM