| 摘要 |
PURPOSE:To acquire a GaAlAs-LED which increases light emitting output greatly by realizing constitution whose AlAs mixed crystal ratio is the lowerest at an area near a p-n interface. CONSTITUTION:A GaAlAs-LED has a hetero structure which is formed by successive epitaxial growth of an n-type GaAlAs layer 2 having AlAs mixed crystal ration profile and a p-type GaAlAs layer 3 on an n-type GaAs substrate and the n-type GaAs substrate is removed thereafter. A circular n-side electrode 1 is formed on a surface of the n-type GaAlAs layer 2 of an epitaxial wafer whose substrate is removed, and a p-side part electrode is formed on a rear of the p-type GaAlAs layer 3. AlAs crystal ratio is the lowerest in an area near a p-n interface, and profile without sharp hetero junction near a p-n interface is provided. When a current is made to flow, light emission and recombination are realized at the p-n interface 5, light toward a surface through the n-type GaAlAs layer 2 is output to the outside as it is and light toward a rear through the p-type GaAlAs layer 3 is reflected at the rear without absorption and can be output to the outside from a surface. As a result, high light emission output can be acquired. |
