WERKWIJZE VOOR HET VERVAARDIGEN VAN EEN HALFGELEIDERSUBSTRAAT.

摘要

A semiconductor substrate including a single-crystal mono-crystalline film on an insulating film and methods of fabrication are provided. The insulating film has an opening to expose the single-crystal material to a polycrystalline or amorphous semiconductor layer on the insulating film for growing mono-crystals upon application of heat slightly less than the melting point of the semiconductor and applying an energy beam, such as an electron beam or light beam to the semiconductor film. The semiconductor-insulator-semiconductor provides improved substitutes for Silicon On Sapphire formed by the epitaxial method.