发明名称 SEMICONDUCTOR ACCELERATION SENSOR
摘要 PURPOSE:To reduce the cost of a sensor, to facilitate the mounting of the sensor to a car and to enhance reliability by forming the conductive fixed electrode opposed to a movable electrode as a single layer or multilayer structure using one or more kind of a metal material. CONSTITUTION:A metal having a high m.p. such as Ni, W or Pt is applied to a glass substrate as a fixed electrode material by sputtering. In order to enhance the film bonding strength to substrates 2, 3, a material having good film bonding properties to the substrates, for example, an Al alloy or Cr is applied to the substrates 2, 3 as an extremely thin layer and a high m.p. metal such as Mo or Ti is further applied thereto to form a two-layer structure consisting of the first and second layers. When acceleration is applied to a sensor 10 in a vertical direction, inertial force acts on an inertia body 5 and a cantilever 4 is bent to change the inertia body 5 in the direction reverse to the acceleration acting on the sensor 10. As a result, the electrostatic capacity of the condensor formed from two upper and lower electrodes 6, 7 and the inertia body 5 changes corresponding to the change of the magnitude of the gaps between the inertia body 5 and the electrodes 6, 7 provided to the substrates 2, 3 and acceleration is detected from the acceleration dependence thereof.
申请公布号 JPH0447272(A) 申请公布日期 1992.02.17
申请号 JP19900155218 申请日期 1990.06.15
申请人 HITACHI LTD;HITACHI AUTOMOT ENG CO LTD 发明人 ICHIKAWA NORIO;SUZUKI KIYOMITSU;TSUCHIYA SHIGEKI;MIKI MASAYUKI;EBINE HIROMICHI;SUGISAWA YUKIKO
分类号 G01P15/125;B81B3/00 主分类号 G01P15/125
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