发明名称 |
Method of manufacturing a semiconductor memory device |
摘要 |
A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.
|
申请公布号 |
US5753527(A) |
申请公布日期 |
1998.05.19 |
申请号 |
US19960613555 |
申请日期 |
1996.03.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ITOH, HIROMI;OKUDAIRA, TOMONORI;KASHIHARA, KEIICHIRO |
分类号 |
H01L27/10;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|