发明名称 THIN FILM TRANSISTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To prevent disconnection between a drain electrode and a transparent electrode correspponding thereto by bringing the transference electrode into contact with a metallic electrode film formed on a gate insulating film. CONSTITUTION:Two or more layers of metallic films are deposited on a glass substrate 10 to form a gate electrode 20. Defects of a pin hole are reduced by depositing two or more layers. Then, a gate insulating film 30 is further deposited thereon, and a source electrode 50 and a drain electrode 60 are formed thereon. A lead-out electrode 61 is patterned to extend to a part of a surface of the insulating layer 30, making a film thickness thereof fully smaller than a thickness of the electrode 60. A transparent electrode 70 is formed by sputtering to extend to a display cell part form above the electrode 61 on the insulating layer 30. Thereby, steps among members from the electrode 60 to the electrode 70 are reduced and problems such as disconnection and contact defective can be reduced.</p>
申请公布号 JPH0445580(A) 申请公布日期 1992.02.14
申请号 JP19900154245 申请日期 1990.06.13
申请人 STANLEY ELECTRIC CO LTD 发明人 HIRAMOTO HIROYUKI
分类号 G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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