| 摘要 |
PURPOSE:To reduce a current value of set pulse which converts chalcogenide semiconductor from crystal state to amorphous state and switches a memory element from 'on' state to 'off' state by making a small diameter of a phase transition region of a semiconductor layer which is equivalent to a diameter of a through-hole. CONSTITUTION:A through-hole of a small diameter (1.5 to 0.1mum) which is smaller than a diameter (2 to 3mum) of a current path is provided to a layer insulating film which insulates a lower electrode and an upper electrode. A part of a chalcogenide semiconductor layer formed on the insulating film is filled inside the through-hole and a part on the insulating film of the semiconductor layer is crystallized; thereby, a part inside the through-hole of the semiconductor layer is made a phase transition region which carries out phase transition of crystal state and amorphous state. |
