| 摘要 |
<p>PURPOSE:To change the display defect of the line defect which generates a cruciform on the display surface of the panel to the display defect of the spot defect having low visibility and to enhance the production yield of the panel by cutting a drain (source) electrode or the gate electrode of a region which is not coated on a silicon thin film by a laser beam. CONSTITUTION:A lower electrode 8 and a lower electrode pass line 8' for an accumulated capacity, then the gate electrode 2 and the gate electrode pass line 2' are stuck and formed. The gate electrode 2 is laminated with an insulating film and interlayer insulating film as the shape having a slit part 9. The silicon thin film 4 as well as the silicon thin film for contact of the drain electrode and the source electrode are stuck to the active element region, then the drain electrode 5 and the drain electrode pass line 5', and the source electrode 6 are stuck and deposited; further, a pixel electrode 7 is constituted. The gate electrode is cut by irradiating the gate electrode part with the laser beam if the gate electrode and the source or drain electrode are interlayer-shorted on the gate electrode 2. The interlayer shorting of the liquid crystal panel where the defect is line-displayed in the cruciform is eliminated and the line defect is changed to the display mode indicating the point defect of the low visibility.</p> |
