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发明名称
INSULATED-GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号
JPH0444273(A)
申请公布日期
1992.02.14
申请号
JP19900149302
申请日期
1990.06.07
申请人
FUJITSU LTD
发明人
OYAMA YASUSHI
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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